MNS2N3810UP
Microchip Technology
Microchip Technology
DUAL SMALL-SIGNAL BJT
$51.16
Available to order
Reference Price (USD)
1+
$51.16500
500+
$50.65335
1000+
$50.1417
1500+
$49.63005
2000+
$49.1184
2500+
$48.60675
Exquisite packaging
Discount
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The MNS2N3810UP by Microchip Technology redefines efficiency in Bipolar Transistor Arrays with its ultra-low noise characteristics. Perfect for RF modules, oscillators, and ADC/DAC circuits, this Discrete Semiconductor Product minimizes signal distortion in high-frequency applications. Automotive infotainment systems and IoT devices benefit from its fast response time and energy-saving operation. Backed by Microchip Technology s quality assurance, the MNS2N3810UP guarantees 100% testing for parameter consistency across all arrayed transistors.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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