MPQ1922GVE-AEC1-P
Monolithic Power Systems Inc.
Monolithic Power Systems Inc.
100V, 3A, HALF-BRIDGE PRE-DRIVER
$4.52
Available to order
Reference Price (USD)
1+
$4.52000
500+
$4.4748
1000+
$4.4296
1500+
$4.3844
2000+
$4.3392
2500+
$4.294
Exquisite packaging
Discount
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Monolithic Power Systems Inc. presents the MPQ1922GVE-AEC1-P as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 0V ~ 100V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 3A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 115 V
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 165°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 22-VFQFN Exposed Pad
- Supplier Device Package: 22-QFN (4x5)
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