MPSA65_D26Z
onsemi
onsemi
TRANS PNP DARL 30V 1.2A TO92-3
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Enhance your circuit designs with the MPSA65_D26Z Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The MPSA65_D26Z is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1.2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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