MRF24G300HS-2UP
NXP USA Inc.
NXP USA Inc.
RF REFERENCE CIRCUIT 600W 2400MH
$2,812.50
Available to order
Reference Price (USD)
1+
$2812.50000
500+
$2784.375
1000+
$2756.25
1500+
$2728.125
2000+
$2700
2500+
$2671.875
Exquisite packaging
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As a leading solution in the Discrete Semiconductor Products market, the MRF24G300HS-2UP RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The MRF24G300HS-2UP's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the MRF24G300HS-2UP provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: GaN
- Frequency: 2.4GHz ~ 2.5GHz
- Gain: 15.3dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: 336W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
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