MRF24G300HSR5
NXP USA Inc.
NXP USA Inc.
RF FET GAN 330W 50V 2500MHZ
$182.52
Available to order
Reference Price (USD)
1+
$182.52000
500+
$180.6948
1000+
$178.8696
1500+
$177.0444
2000+
$175.2192
2500+
$173.394
Exquisite packaging
Discount
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The MRF24G300HSR5 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The MRF24G300HSR5's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s MRF24G300HSR5 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Active
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 2.4GHz ~ 2.5GHz
- Gain: 15.3dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: 300W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
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