MRF559T
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 16V 870MHZ
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRF559T RF Bipolar Junction Transistor (BJT) by Microsemi Corporation is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust Microsemi Corporation for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: 870MHz
- Noise Figure (dB Typ @ f): -
- Gain: 9.5dB
- Power - Max: 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microsemi Corporation
64020H
Microsemi Corporation
SD8268-21H
Central Semiconductor Corp
2N5109UB BK
Microsemi Corporation
SD1013
CEL
NESG2107M33-A
Central Semiconductor Corp
CP243-CM5943-WN
Microsemi Corporation
76016S
Microsemi Corporation
0204-125
Microsemi Corporation
40036S
Microsemi Corporation