MRF5812
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 15V 5GHZ 8SOIC
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Upgrade your RF circuits with the MRF5812, a high-efficiency Bipolar Junction Transistor (BJT) from Microsemi Corporation. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The MRF5812 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Microsemi Corporation for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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