MRF5812GR2
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 15V 5GHZ 8SO
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Introducing the MRF5812GR2, a high-performance RF Bipolar Junction Transistor (BJT) from Microsemi Corporation, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The MRF5812GR2 features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Microsemi Corporation for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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