MRF6S19100MR1
NXP USA Inc.
NXP USA Inc.
FET RF 68V 1.99GHZ TO270-4
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As a leading solution in the Discrete Semiconductor Products market, the MRF6S19100MR1 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The MRF6S19100MR1's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the MRF6S19100MR1 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 14.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 22W
- Voltage - Rated: 68 V
- Package / Case: TO-270-4
- Supplier Device Package: TO-270 WB-4
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