MRF6S19120HR3
NXP USA Inc.
NXP USA Inc.
FET RF 68V 1.99GHZ NI-780
$0.00
Available to order
Reference Price (USD)
250+
$68.97380
Exquisite packaging
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The MRF6S19120HR3 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The MRF6S19120HR3's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s MRF6S19120HR3 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 15dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1 A
- Power - Output: 19W
- Voltage - Rated: 68 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
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