MRF6V13250HSR5
NXP USA Inc.
NXP USA Inc.
FET RF 120V 1.3GHZ NI780S
$0.00
Available to order
Reference Price (USD)
50+
$279.13780
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the MRF6V13250HSR5, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The MRF6V13250HSR5 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the MRF6V13250HSR5 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.3GHz
- Gain: 22.7dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 250W
- Voltage - Rated: 120 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
Related Products
MACOM Technology Solutions
MAGX-000035-01000S
Infineon Technologies
PTFA181001EV4XWSA1
NXP USA Inc.
MRF8S21200HR5
Ampleon USA Inc.
BLF8G24LS-200P,112
Ampleon USA Inc.
BLF1046
Ampleon USA Inc.
BLF7G27LS-75P,118
NXP USA Inc.
MRF6S19200HSR5
onsemi
MMBFJ210
NXP USA Inc.
BF1201,215
onsemi