MRF6V2010GNR1
NXP USA Inc.
NXP USA Inc.
FET RF 110V 220MHZ TO-270G-2
$0.00
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Reference Price (USD)
500+
$15.43010
Exquisite packaging
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The MRF6V2010GNR1 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The MRF6V2010GNR1's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s MRF6V2010GNR1 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 220MHz
- Gain: 23.9dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 30 mA
- Power - Output: 10W
- Voltage - Rated: 110 V
- Package / Case: TO-270BA
- Supplier Device Package: TO-270G-2
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