MRF6V2010NBR5
NXP USA Inc.
NXP USA Inc.
FET RF 110V 220MHZ TO-272-2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the MRF6V2010NBR5, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The MRF6V2010NBR5 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the MRF6V2010NBR5 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 220MHz
- Gain: 23.9dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 30 mA
- Power - Output: 10W
- Voltage - Rated: 110 V
- Package / Case: TO-272BC
- Supplier Device Package: TO-272-2
Related Products
NXP USA Inc.
MRF7S21080HSR5
Ampleon USA Inc.
BLF6G22LS-180PN,11
NXP USA Inc.
MRF6VP41KHR6
Wolfspeed, Inc.
PTRA093302FC-V1-R0
Ampleon USA Inc.
BLF7G21L-160P,112
Infineon Technologies
PTFA180701FV4R250XTMA1
Ampleon USA Inc.
BLF6G10L-260PRN:11
Ampleon USA Inc.
BLF6G10-45,112
Infineon Technologies
PTFA041501GL V1 R250
NXP USA Inc.