MRF6V2150NR1
NXP USA Inc.
NXP USA Inc.
RF ULTRA HIGH FREQUENCY BAND, N-
$0.00
Available to order
Reference Price (USD)
500+
$48.84238
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRF6V2150NR1 RF MOSFET transistor by NXP USA Inc. is a high-reliability component in the Discrete Semiconductor Products sector, specifically within Transistors - FETs, MOSFETs - RF. This transistor is optimized for high-frequency operation, offering low insertion loss, high efficiency, and excellent impedance matching. Its versatile design makes it suitable for a wide range of applications, including marine communication systems, avionics, and scientific instrumentation. The MRF6V2150NR1 stands out for its ability to handle high power levels while maintaining signal integrity. When you choose NXP USA Inc.'s MRF6V2150NR1, you're selecting a transistor that delivers consistent performance in the most challenging RF environments.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 220MHz
- Gain: 25dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 450 mA
- Power - Output: 150W
- Voltage - Rated: 110 V
- Package / Case: TO-270AB
- Supplier Device Package: TO-270 WB-4
Related Products
NXP USA Inc.
MRF6S21140HSR5
Wolfspeed, Inc.
PTFB182503FL-V2-R250
Fairchild Semiconductor
FDMF5804
NXP USA Inc.
MRF5S19090HR5
Wolfspeed, Inc.
PXAC201202FC-V2
Infineon Technologies
PTFC262808SVV1XWSA1
NXP USA Inc.
A2T21S260W12NR3
NXP USA Inc.
MRF6S21060MBR1
Wolfspeed, Inc.
PTFB181702FC-V1-R0
Ampleon USA Inc.