MRF6V2300NR5578
NXP USA Inc.
NXP USA Inc.
N CHANNEL ENHANCEMENT-MODE RF PO
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the MRF6V2300NR5578 from NXP USA Inc. for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the MRF6V2300NR5578 stands out for its reliability and efficiency. NXP USA Inc.'s advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
APTMC170AM60CT1AG
onsemi
FW344A-TL-2WX
Microsemi Corporation
APTM50DSKM65T3G
Renesas Electronics America Inc
UPA2382T1P-E1-A#YK1
onsemi
MCH3360-TL-E-ON
onsemi
FDG6332C-PG
onsemi
NSTJD1155LT1G
Renesas Electronics America Inc
UPA2376T1P-E1-A#YK1
Vishay Siliconix
VQ2001P-2
IXYS