MRF6VP2600HR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 110V 225MHZ NI1230
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The MRF6VP2600HR6 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The MRF6VP2600HR6's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s MRF6VP2600HR6 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 225MHz
- Gain: 25dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 2.6 A
- Power - Output: 125W
- Voltage - Rated: 110 V
- Package / Case: NI-1230
- Supplier Device Package: NI-1230
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