MRF7S21110HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.17GHZ NI-780S
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As a leading solution in the Discrete Semiconductor Products market, the MRF7S21110HSR3 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The MRF7S21110HSR3's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the MRF7S21110HSR3 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 17.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.1 A
- Power - Output: 33W
- Voltage - Rated: 65 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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