MRF7S21150HR5
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.17GHZ NI-780
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the MRF7S21150HR5, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The MRF7S21150HR5 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the MRF7S21150HR5 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 17.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.35 A
- Power - Output: 44W
- Voltage - Rated: 65 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
Related Products
NXP USA Inc.
MRFE6S9205HR3
NXP USA Inc.
MRF8S9202GNR3
STMicroelectronics
SD3932
Broadcom Limited
ATF-511P8-TR1
NXP USA Inc.
MRF6S19100HR5
NXP USA Inc.
MRF7S15100HR5
NXP USA Inc.
MRF7S18125BHR3
NXP USA Inc.
BF1217WR,115
NXP USA Inc.
MRF5S21100HR5
Infineon Technologies