MRF7S27130HR5
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.7GHZ NI-780
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
As a leading solution in the Discrete Semiconductor Products market, the MRF7S27130HR5 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The MRF7S27130HR5's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the MRF7S27130HR5 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.7GHz
- Gain: 16.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.5 A
- Power - Output: 23W
- Voltage - Rated: 65 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
Related Products
STMicroelectronics
PD85025C
CEL
NE5550234-T1-AZ
MACOM Technology Solutions
MAGX-001090-600L00
Ampleon USA Inc.
BLF6G10-160RN,112
NXP USA Inc.
BF545A,215
onsemi
J310RLRP
Ampleon USA Inc.
BLF6G10LS-135R,118
NXP USA Inc.
MRF6V2010NBR1
Ampleon USA Inc.
BLF7G27LS-140,118
NXP USA Inc.