MRF8P18265HSR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 1.88GHZ NI1230S8
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRF8P18265HSR6 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the MRF8P18265HSR6 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust NXP USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.88GHz
- Gain: 16dB
- Voltage - Test: 30 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 72W
- Voltage - Rated: 65 V
- Package / Case: SOT-1110B
- Supplier Device Package: NI1230S-8
Related Products
Ampleon USA Inc.
ART1K6PHZ
STMicroelectronics
STAC1214-250
NXP USA Inc.
MRF8S19260HSR5
Infineon Technologies
PTFA081501E1V4R250XTMA1
Wolfspeed, Inc.
PTFA091201E-V4-R0
NXP USA Inc.
MRF5S19100HR3
NXP USA Inc.
MRF5S19130HSR3
NXP USA Inc.
MRF6S19140HSR3
Infineon Technologies
PXFC192207SHV1R250XTMA1
Infineon Technologies