MRF8P29300HSR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.9GHZ NI1230S
$0.00
Available to order
Reference Price (USD)
150+
$361.37113
Exquisite packaging
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The MRF8P29300HSR6 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The MRF8P29300HSR6's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s MRF8P29300HSR6 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.9GHz
- Gain: 13.3dB
- Voltage - Test: 30 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 320W
- Voltage - Rated: 65 V
- Package / Case: NI-1230S
- Supplier Device Package: NI-1230S
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