MRF8S19140HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 1.96GHZ NI780HS
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Designed for superior RF performance, the MRF8S19140HSR3 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The MRF8S19140HSR3 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the MRF8S19140HSR3 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.96GHz
- Gain: 19.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.1 A
- Power - Output: 34W
- Voltage - Rated: 65 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
Related Products
Ampleon USA Inc.
BLC8G24LS-240AVZ
NXP USA Inc.
MRF6S9060NR1
onsemi
2N5245_J35Z
NXP USA Inc.
MRF7S19210HR5
Broadcom Limited
ATF-38143-TR2G
Ampleon USA Inc.
BLF3G21-30,112
NXP USA Inc.
MRF6S9130HR3
NXP USA Inc.
MRF7S21150HR3
NXP USA Inc.
MRF1535FNT1
MACOM Technology Solutions