MRFE6S9130HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 66V 880MHZ NI-780S
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRFE6S9130HSR3 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The MRFE6S9130HSR3's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s MRFE6S9130HSR3 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 880MHz
- Gain: 19.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 27W
- Voltage - Rated: 66 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
Related Products
Broadcom Limited
ATF-331M4-BLK
Infineon Technologies
PTFA240451E V1
Ampleon USA Inc.
BLF6G10L-40BRN,112
Ampleon USA Inc.
BLF2425M7L100J
Broadcom Limited
ATF-551M4-TR2
Ampleon USA Inc.
BLF6G10L-40BRN,118
NXP USA Inc.
ON5264,127
STMicroelectronics
LET16060C
Ampleon USA Inc.
BLF8G20LS-140VU
STMicroelectronics