MRFE6VP100HSR5
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 133V 512MHZ NI780
$150.12
Available to order
Reference Price (USD)
50+
$74.93060
Exquisite packaging
Discount
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As a leading solution in the Discrete Semiconductor Products market, the MRFE6VP100HSR5 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The MRFE6VP100HSR5's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the MRFE6VP100HSR5 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 512MHz
- Gain: 26dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 100W
- Voltage - Rated: 133 V
- Package / Case: NI-780S-4L
- Supplier Device Package: NI-780S-4L
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