MRFE6VP8600HSR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S
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The MRFE6VP8600HSR6 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The MRFE6VP8600HSR6's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the MRFE6VP8600HSR6 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: LDMOS (Dual)
- Frequency: 860MHz
- Gain: 19.3dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 125W
- Voltage - Rated: 130 V
- Package / Case: NI-1230S
- Supplier Device Package: NI-1230S
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