MRFE8VP8600HSR5
NXP USA Inc.
NXP USA Inc.
BROADBAND RF POWER LDMOS TRANSIS
$285.67
Available to order
Reference Price (USD)
50+
$136.52900
Exquisite packaging
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The MRFE8VP8600HSR5 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The MRFE8VP8600HSR5's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the MRFE8VP8600HSR5 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 860MHz
- Gain: 21dB
- Voltage - Test: 50 V
- Current Rating (Amps): 20µA
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 140W
- Voltage - Rated: 115 V
- Package / Case: NI-1230-4S
- Supplier Device Package: NI-1230-4S