MRFG35002N6AT1
NXP USA Inc.
NXP USA Inc.
FET RF 8V 3.55GHZ PLD-1.5
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The MRFG35002N6AT1 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The MRFG35002N6AT1's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s MRFG35002N6AT1 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Obsolete
- Transistor Type: pHEMT FET
- Frequency: 3.55GHz
- Gain: 10dB
- Voltage - Test: 6 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 65 mA
- Power - Output: 158mW
- Voltage - Rated: 8 V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
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