MRFG35002N6R5
NXP USA Inc.
NXP USA Inc.
FET RF 8V 3.55GHZ
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRFG35002N6R5 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the MRFG35002N6R5 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust NXP USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Obsolete
- Transistor Type: pHEMT FET
- Frequency: 3.55GHz
- Gain: 10dB
- Voltage - Test: 6 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 65 mA
- Power - Output: 1.5W
- Voltage - Rated: 8 V
- Package / Case: PLD-1.5
- Supplier Device Package: PLD-1.5
Related Products
Ampleon USA Inc.
BLC9G24XS-170AVY
Freescale Semiconductor
MRFE6VP6300HSR3
Infineon Technologies
PTFB211803FLV2R0XTMA1
NXP USA Inc.
MRF5S21045MR1
STMicroelectronics
LET9070FB
NXP USA Inc.
MRF5S19090HSR5
NXP USA Inc.
MRFG35030R5
Infineon Technologies
PTFB192557SHV1XWSA1
Infineon Technologies
PXFC193808SVV1R250XTMA1
NXP USA Inc.