MRFX1K80NR5578
NXP USA Inc.
NXP USA Inc.
RF POWER FIELD-EFFECT TRANSISTOR
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As a leading solution in the Discrete Semiconductor Products market, the MRFX1K80NR5578 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The MRFX1K80NR5578's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the MRFX1K80NR5578 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.8MHz ~ 400MHz
- Gain: 24.4dB
- Voltage - Test: 65 V
- Current Rating (Amps): 100mA
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 1800W
- Voltage - Rated: 179 V
- Package / Case: OM-1230-4L2L
- Supplier Device Package: OM-1230-4L2L
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