MS1001
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 18V 30MHZ M174
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Enhance your RF designs with the MS1001, a high-efficiency Bipolar Junction Transistor (BJT) from Microsemi Corporation. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The MS1001 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Microsemi Corporation for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: 13dB
- Power - Max: 270W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M174
- Supplier Device Package: M174
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