MS1003
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 18V 175MHZ M111
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Discover the MS1003, a premium RF Bipolar Junction Transistor (BJT) by Microsemi Corporation, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The MS1003 boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose Microsemi Corporation for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 136MHz ~ 175MHz
- Noise Figure (dB Typ @ f): -
- Gain: 6dB
- Power - Max: 270W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: M111
- Supplier Device Package: M111
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