MS1512
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 25V 860MHZ M122
$0.00
Available to order
Reference Price (USD)
75+
$61.74267
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the MS1512, a cutting-edge RF Bipolar Junction Transistor (BJT) from Microsemi Corporation, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The MS1512 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Microsemi Corporation for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 860MHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 19.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 1.2A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: M122
- Supplier Device Package: M122
Related Products
Microsemi Corporation
MS1000
Microsemi Corporation
MS2870
MACOM Technology Solutions
MAPHST0033
NXP USA Inc.
BFU550XR215
Microsemi Corporation
61032Q
CEL
NE85633-A
Microsemi Corporation
MS2248
Microsemi Corporation
UMIL3B
CEL