MS2361
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 1.15GHZ M115
$0.00
Available to order
Reference Price (USD)
1+
$79.54000
10+
$74.71800
25+
$71.34360
100+
$67.48730
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the MS2361, a premium RF Bipolar Junction Transistor (BJT) by Microsemi Corporation, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The MS2361 boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose Microsemi Corporation for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 9dB
- Power - Max: 87.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 2.6A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M115
- Supplier Device Package: M115
Related Products
Central Semiconductor Corp
CM4957 PBFREE
Microsemi Corporation
SD1536-08
Central Semiconductor Corp
CP681-MPSH81-CT
Central Semiconductor Corp
CP223-2N3866-CT
Microsemi Corporation
MS2589
Microsemi Corporation
MS2422
Microsemi Corporation
68234Z
Central Semiconductor Corp
CP616-CM5160-CT
Microsemi Corporation