MS8151-P2613
Microchip Technology
Microchip Technology
GAAS SCHOTTKY NON HERMETIC FLIP
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Upgrade your RF systems with the MS8151-P2613 RF Diode from Microchip Technology, a key player in the Discrete Semiconductor Products industry. This diode is crafted for high-frequency applications, offering excellent signal integrity and thermal performance. Commonly used in 5G technology, automotive radar, and test equipment, the MS8151-P2613 ensures top-tier functionality. Microchip Technology's dedication to quality and innovation shines through in this exceptional Diodes - RF product.
Specifications
- Product Status: Active
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 3V
- Current - Max: 15 mA
- Capacitance @ Vr, F: 60pF @ 0V, 1MHz
- Resistance @ If, F: 9Ohm @ 10mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
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