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MSC025SMA330B4

Microchip Technology
MSC025SMA330B4 Preview
Microchip Technology
MOSFET SIC 3300 V 25 MOHM TO-247
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 20 V
  • Vgs (Max): +23V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8720 pF @ 2640 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4

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