MSC040SMA120S/TR
Microchip Technology
Microchip Technology
MOSFET SIC 1200 V 40 MOHM TO-268
$23.78
Available to order
Reference Price (USD)
1+
$23.78000
500+
$23.5422
1000+
$23.3044
1500+
$23.0666
2000+
$22.8288
2500+
$22.591
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MSC040SMA120S/TR from Microchip Technology redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the MSC040SMA120S/TR offers the precision and reliability you need. Trust Microchip Technology to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.6V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
- Vgs (Max): +23V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 303W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Renesas Electronics America Inc
2SK2111-T2-AZ
Diodes Incorporated
DMTH10H010SPSQ-13
Infineon Technologies
IAUZ40N06S5L050ATMA1
Diodes Incorporated
BSS138WQ-7-F
Goford Semiconductor
1002
IXYS
IXTY02N50D-TRL
Diodes Incorporated
DMNH10H028SPSQ-13
Diodes Incorporated
DMP1011LFV-7
Renesas
2SK2857-T1-AZ
Diodes Incorporated