MSC360SMA120SA
Microchip Technology
Microchip Technology
MOSFET SIC 1200 V 360 MOHM TO-26
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Optimize your power electronics with the MSC360SMA120SA single MOSFET from Microchip Technology. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the MSC360SMA120SA combines cutting-edge technology with Microchip Technology's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
- Vgs(th) (Max) @ Id: 3.14V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
- Vgs (Max): +23V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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