MSCGLQ50H120CTBL2NG
Microchip Technology
Microchip Technology
PM-IGBT-SBD-BL2
$208.72
Available to order
Reference Price (USD)
1+
$208.72000
500+
$206.6328
1000+
$204.5456
1500+
$202.4584
2000+
$200.3712
2500+
$198.284
Exquisite packaging
Discount
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Microchip Technology's MSCGLQ50H120CTBL2NG sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the MSCGLQ50H120CTBL2NG in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Microchip Technology to deliver cutting-edge IGBT solutions with the MSCGLQ50H120CTBL2NG power module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 375 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 25 µA
- Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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