MSCSM120AM042CT6AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP6C
$896.94
Available to order
Reference Price (USD)
1+
$896.94000
500+
$887.9706
1000+
$879.0012
1500+
$870.0318
2000+
$861.0624
2500+
$852.093
Exquisite packaging
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Choose the MSCSM120AM042CT6AG from Microchip Technology for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the MSCSM120AM042CT6AG stands out for its reliability and efficiency. Microchip Technology's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
- Power - Max: 2.031kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C
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