MSCSM120AM11CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP3F
$409.54
Available to order
Reference Price (USD)
1+
$409.54000
500+
$405.4446
1000+
$401.3492
1500+
$397.2538
2000+
$393.1584
2500+
$389.063
Exquisite packaging
Discount
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The MSCSM120AM11CT3AG by Microchip Technology is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the MSCSM120AM11CT3AG provides reliable operation under stringent conditions. Microchip Technology's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
- Power - Max: 1.067kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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