MSCSM170AM11CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP3F
$567.84
Available to order
Reference Price (USD)
1+
$567.84000
500+
$562.1616
1000+
$556.4832
1500+
$550.8048
2000+
$545.1264
2500+
$539.448
Exquisite packaging
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Discover the high-performance MSCSM170AM11CT3AG from Microchip Technology, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the MSCSM170AM11CT3AG delivers unmatched performance. Trust Microchip Technology's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
- Power - Max: 1.14kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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