MSCSM170HM087CAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP6C
$1,347.93
Available to order
Reference Price (USD)
1+
$1347.93000
500+
$1334.4507
1000+
$1320.9714
1500+
$1307.4921
2000+
$1294.0128
2500+
$1280.5335
Exquisite packaging
Discount
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The MSCSM170HM087CAG by Microchip Technology is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the MSCSM170HM087CAG provides reliable operation under stringent conditions. Microchip Technology's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Full Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
- Power - Max: 1.114kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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