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MSCSM170HM45CT3AG

Microchip Technology
MSCSM170HM45CT3AG Preview
Microchip Technology
PM-MOSFET-SIC-SBD-SP3F
$339.09
Available to order
Reference Price (USD)
1+
$339.09000
500+
$335.6991
1000+
$332.3082
1500+
$328.9173
2000+
$325.5264
2500+
$322.1355
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: 4 N-Channel (Full Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
  • Power - Max: 319W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

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