MSE07PB-M3/89A
Vishay General Semiconductor - Diodes Division
        
                
                                Vishay General Semiconductor - Diodes Division                            
                        
                                DIODE GP 100V 700MA MICROSMP                            
                        $0.35
                            
                                
                                Available to order
                            
                        Reference Price (USD)
4,500+
                                            $0.06072
                                        9,000+
                                            $0.05352
                                        13,500+
                                            $0.04632
                                        31,500+
                                            $0.04392
                                        112,500+
                                            $0.03912
                                        Exquisite packaging
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                    The MSE07PB-M3/89A by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The MSE07PB-M3/89A is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the MSE07PB-M3/89A delivers top-notch performance in any application.                
            Specifications
- Product Status: Active
 - Diode Type: Standard
 - Voltage - DC Reverse (Vr) (Max): 100 V
 - Current - Average Rectified (Io): 700mA
 - Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
 - Speed: Standard Recovery >500ns, > 200mA (Io)
 - Reverse Recovery Time (trr): 780 ns
 - Current - Reverse Leakage @ Vr: 1 µA @ 100 V
 - Capacitance @ Vr, F: 5pF @ 4V, 1MHz
 - Mounting Type: Surface Mount
 - Package / Case: MicroSMP
 - Supplier Device Package: MicroSMP (DO-219AD)
 - Operating Temperature - Junction: -55°C ~ 175°C
 
