MSR2N3637UB/TR
Microchip Technology
Microchip Technology
SMALL-SIGNAL BJT
$127.66
Available to order
Reference Price (USD)
1+
$127.66500
500+
$126.38835
1000+
$125.1117
1500+
$123.83505
2000+
$122.5584
2500+
$121.28175
Exquisite packaging
Discount
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Experience unmatched performance with the MSR2N3637UB/TR Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the MSR2N3637UB/TR delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Microchip Technology for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 175 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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