MSRT200120AD
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN 1.2KV 200A 3 TOWER
$84.40
Available to order
Reference Price (USD)
1+
$84.40400
500+
$83.55996
1000+
$82.71592
1500+
$81.87188
2000+
$81.02784
2500+
$80.1838
Exquisite packaging
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The MSRT200120AD from GeneSiC Semiconductor is a standout in the Discrete Semiconductor Products family, offering unmatched rectification efficiency in compact diode arrays. Designed for high-density PCB layouts, this product excels in bridge rectifiers and polarity protection circuits. Its low leakage current and high-temperature stability make it a favorite for telecommunications, consumer electronics, and medical devices. Choose GeneSiC Semiconductor's MSRT200120AD for applications where space-saving design meets industrial-grade reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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