MSRT200160A
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 1.6KV 200A 3TOWER
$51.48
Available to order
Reference Price (USD)
1+
$51.48000
500+
$50.9652
1000+
$50.4504
1500+
$49.9356
2000+
$49.4208
2500+
$48.906
Exquisite packaging
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Engineered for excellence, GeneSiC Semiconductor's MSRT200160A represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With GeneSiC Semiconductor's proprietary screening processes, the MSRT200160A guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature - Junction: -40°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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