MT29E2T08CUHBBM4-3:B TR
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 2TB PARALLEL 333MHZ
$262.30
Available to order
Reference Price (USD)
1,000+
$241.32060
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MT29E2T08CUHBBM4-3:B TR by Micron Technology Inc. is a premium Memory IC designed to enhance the performance of your electronic systems. As part of the Memory category, this IC provides efficient data storage and retrieval, making it indispensable for modern technology. Its compact design and high-speed operation make it a preferred choice for various applications.
Memory ICs like the MT29E2T08CUHBBM4-3:B TR are known for their durability and high performance. These ICs feature advanced architectures that support large data capacities and fast access times. The MT29E2T08CUHBBM4-3:B TR is no exception, offering reliable operation and low power consumption, which are critical for battery-powered devices.
The MT29E2T08CUHBBM4-3:B TR is utilized in numerous fields, including consumer electronics, aerospace, and defense. For instance, it is commonly found in laptops and gaming consoles where speed and storage are essential. Additionally, it is used in aerospace systems where reliability and performance cannot be compromised. The MT29E2T08CUHBBM4-3:B TR is a versatile and dependable Memory IC for diverse applications.
Specifications
- Product Status: Not For New Designs
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 2Tb (256G x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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