MT29E3T08EUHBBM4-3:B
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 3TB PARALLEL 333MHZ
$275.43
Available to order
Reference Price (USD)
1,120+
$253.39560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic designs with the MT29E3T08EUHBBM4-3:B Memory IC from Micron Technology Inc., a leading component in the Memory category. This IC offers unparalleled data storage and access speeds, making it a must-have for high-performance systems. Its innovative architecture ensures efficiency and reliability in diverse operating conditions.
The MT29E3T08EUHBBM4-3:B embodies the essential features of Memory ICs: high capacity, fast operation, and low power consumption. These ICs are pivotal in devices that require rapid data processing, such as digital cameras and communication modules. The MT29E3T08EUHBBM4-3:B excels in these areas, providing consistent and dependable performance.
This Memory IC is extensively used in fields like robotics, industrial control systems, and consumer gadgets. For example, it is a key component in robotic arms that require precise and quick data handling. It also enhances the functionality of smart appliances by enabling efficient memory operations. The MT29E3T08EUHBBM4-3:B is a top-tier choice for Memory ICs in various industries.
Specifications
- Product Status: Not For New Designs
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 3Tb (384G x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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