MT29E3T08EUHBBM4-3:B TR
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 3TB PARALLEL 333MHZ
$275.43
Available to order
Reference Price (USD)
1,000+
$253.39560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your systems with the MT29E3T08EUHBBM4-3:B TR Memory IC from Micron Technology Inc., a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The MT29E3T08EUHBBM4-3:B TR showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The MT29E3T08EUHBBM4-3:B TR excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The MT29E3T08EUHBBM4-3:B TR is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Not For New Designs
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 3Tb (384G x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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